for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 86 linear & power amplifiers - smt hmc441lm1 gaas phemt mmic medium power amplifier, 7.0 - 15.5 ghz v02.0508 general description features functional diagram the hmc441lm1 is a broadband 7 to 15.5 ghz gaas phemt mmic medium power ampli er in an smt leadless chip carrier package. the ampli er provides 15 db of gain, 21.5 dbm of saturated power at 27% pa e f r o m a + 5 v s u p p l y v o l t a g e . a n o p t i o n a l g a t e b i a s i s provided to allow adjustment of gain, rf output power, and dc power dissipation. this 50 ohm matched ampli er does not require any external components making it an ideal linear gain block or driver for hmc smt mixers. gain: 15 db saturated power: +21.5 dbm @ 27% pae single supply voltage: +5v w/ optional gate bias 50 ohms matched input/output leadless smt package, 25mm 2 electrical speci cations, t a = +25 c, vdd = 5v, vgg1 = vgg2 = open typical applications vgg1, vgg2: optional gate bias parameter min. typ. max. min. typ. max. min. typ. max. min. typ. max. units frequency range 7.0 - 8.0 8.0 - 12.5 12.5 - 14.0 14.0 - 15.5 ghz gain 12.5 15 13.5 16 12.5 15 11 13.5 db gain variation over temperature 0.015 0.02 0.015 0.02 0.015 0.02 0.015 0.02 db/ c input return loss 9 13 16 16 db output return loss 14 17 20 17 db output power for 1 db compression (p1db) 15.5 18.5 16 19 17 20 16 19 dbm saturated output power (psat) 19.5 20.5 21.5 20.5 dbm output third order intercept (ip3) 29 30 30 30 dbm noise figure 4.5 4.5 4.5 4.5 db supply current (idd) 90 115 90 115 90 115 90 115 ma the hmc441lm1 is a medium pa for: ? point-to-point radios ? point-to-multi-point radios ? vsat ? lo driver for hmc mixers ? military ew & ecm
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 87 input return loss vs. temperature output return loss vs. temperature broadband gain & return loss gain vs. temperature p1db vs. temperature psat vs. temperature -30 -20 -10 0 10 20 4 8 12 16 20 s21 s11 s22 response (db) frequency (ghz) -25 -20 -15 -10 -5 0 6 8 10 12 14 16 18 +25c +85c -40c return loss (db) frequency (ghz) 13 15 17 19 21 23 6 8 10 12 14 16 18 +25c +85c -40c psat (dbm) frequency (ghz) -25 -20 -15 -10 -5 0 6 8 10 12 14 16 18 +25c +85c -40c return loss (db) frequency (ghz) 13 15 17 19 21 23 6 8 10 12 14 16 18 +25c +85c -40c p1db (dbm) frequency (ghz) 0 4 8 12 16 20 6 8 10 12 14 16 18 +25c +85c -40c gain (db) frequency (ghz) hmc441lm1 v02.0508 gaas phemt mmic medium power amplifier, 7 - 15.5 ghz
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 88 linear & power amplifiers - smt power compression @ 12 ghz output ip3 vs. temperature noise figure vs. temperature gain, power & output ip3 vs. supply voltage @ 12 ghz reverse isolation vs. temperature gain, power, output ip3 & idd vs. gate voltage @ 12 ghz 0 5 10 15 20 25 30 35 0 30 60 90 120 150 180 210 -2 -1.8 -1.6 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 gain (db), p1db (dbm), psat (dbm), ip3 (dbm ) idd (ma) vgg1, vgg2 gate volltage (v) gain psat ip3 p1db idd 10 12 14 16 18 20 22 24 26 28 30 32 3 3.5 4 4.5 5 5.5 gain p1db psat ip3 gain (db), p1db (dbm), psat (dbm), ip3 (dbm ) vdd supply voltage (v) -60 -50 -40 -30 -20 -10 0 6 8 10 12 14 16 18 +25c +85c -40c isolation (db) frequency (ghz) 0 2 4 6 8 10 6 8 10 12 14 16 18 +25c +85c -40c noise figure (db) frequency (ghz) 0 5 10 15 20 25 30 -10 -6 -2 2 6 10 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) 16 20 24 28 32 36 6 8 10 12 14 16 18 +25c +85c -40c ip3 (dbm) frequency (ghz) hmc441lm1 v02.0508 gaas phemt mmic medium power amplifier, 7 - 15.5 ghz
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 89 outline drawing absolute maximum ratings drain bias voltage (vdd) +5.5 v gate bias voltage (vgg1,vgg2) -8 to 0v rf input power (rfin) (vdd = +5 vdc) +15 dbm channel temperature 175 c continuous pdiss (t = 85 c) (derate 7.5 mw/c above 85 c) 0.67 w thermal resistance (channel to ground paddle) 133 c/w storage temperature -65 to +150 c operating temperature -40 to +85 c vdd (v) idd (ma) +5.5 92 +5.0 90 +4.5 88 +3.3 83 +3.0 82 note: ampli er will operate over full voltage range shown above typical supply current vs. vdd notes: 1. material: plastic 2. plating: gold over nickel 3. dimensions are in inches [millimeters]. 4. all tolerances are 0.005 [0.13]. 5. all grounds must be soldered to pcb rf ground. 6. ? indicates pin 1. electrostatic sensitive device observe handling precautions hmc441lm1 v02.0508 gaas phemt mmic medium power amplifier, 7 - 15.5 ghz
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 90 linear & power amplifiers - smt pin descriptions pin number function description interface schematic 1, 3, 5 n/c this pin may be connected to rf ground. 2vdd power supply voltage for the ampli er. an external bypass capacitor of 100 pf is recommended. 4rfout this pin is ac coupled and matched to 50 ohms. 6, 7 vgg2, vgg1 optional gate control for ampli er. if left open, the ampli er will run at standard current. negative voltage applied will reduce current. 8rfin this pin is ac coupled and matched to 50 ohms. gnd package bottom must be connected to rf ground. hmc441lm1 v02.0508 gaas phemt mmic medium power amplifier, 7 - 15.5 ghz
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 91 evaluation pcb evaluation circuit board layout design details the grounded co-planar wave guide (cpwg) pcb input/output transitions allow use of ground-signal-ground (gsg) probes for testing. suggested probe pitch is 400um (16 mils). alternatively, the board can be mounted in a metal housing with 2.4mm coaxial connectors. layout technique micro strip to cpwg material rogers 4003 with 1/2 oz, cu dielectric thickness 0.008 (0.20 mm) microstrip line width 0.018 (0.46 mm) cpwg line width 0.016 (0.41 mm) cpwg line to gnd gap 0.005 (0.13 mm) ground via hole diameter 0.008 (0.20 mm) c1 - c3 100 pf capacitor, 0402 pkg. hmc441lm1 v02.0508 gaas phemt mmic medium power amplifier, 7 - 15.5 ghz
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 92 linear & power amplifiers - smt suggested lm1 pcb land pattern tolerance: 0.003 ( 0.08 mm) ampli er application circuit note: optional gate bias connections. vgg1 and vgg2 may be connected to a common vgg feed. hmc441lm1 v02.0508 gaas phemt mmic medium power amplifier, 7 - 15.5 ghz
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 93 recommended smt attachment technique preparation & handling of the lm1 microwave package for surface mounting the hmc lm1 package was designed to be compatible with high volume surface mount pcb assembly processes. the lm1 package requires a speci c mounting pattern to allow proper mechanical attachment and to optimize electrical performance at millimeterwave frequencies. this pcb layout pattern can be found on each lm1 product data sheet. it can also be provided as an electronic drawing upon request from hittite sales & application engineering. follow these precautions to avoid permanent damage: cleanliness: observe proper handling procedures to ensure clean devices and pcbs. lm1 devices should remain in their original packaging until component placement to ensure no contamination or damage to rf, dc & ground contact areas. static sensitivity: follow esd precautions to protect against esd strikes. general handling: handle the lm1 package on the top with a vacuum collet or along the edges with a sharp pair of bent tweezers. avoiding damaging the rf, dc, & ground contacts on the package bottom. do not apply excess pressure to the top of the lid. solder materials & temperature pro le: follow the information contained in the application note. hand soldering is not recomm ended. conductive epoxy attachment is not recommended. solder paste: solder paste should be selected based on the users experience and be compatible with the metallization systems used. see the lm1 data sheet outline drawing for pin & ground contact metallization schemes. solder paste application: solder paste is generally applied to the pcb using either a stencil printer or dot placement. the v olume of solder paste will be dependent on pcb and component layout and should be controlled to ensure consistent mechanical & electrica l performance. excess solder may create unwanted electrical parasitics at high frequencies. solder re ow: the soldering process is usually accomplished in a re ow oven but may also use a vapor phase process. a solde r re ow pro le is suggested above. prior to re owing product, temperature pro les should be measured using the same mass as the actual assemblies. the thermo- couple should be moved to various positions on the board to account for edge and corner effects and varying component masses. the nal pro le should be determined by mounting the thermocouple to the pcb at the location of the device. follow solder paste and oven vendors recommendations when developing a solder re ow pro le. a standard pro le will have a steady ramp up from room temperature to the pre-heat temperature to avoid damage due to thermal shock. allow enough time between reaching pre-heat temperature and re ow for the solvent in the paste to evaporate and the ux to completely activate. re ow must then occur prior to the ux being completely driven off. the duration of peak re ow temperature should not excee d 15 seconds. packages have been quali ed to withstand a peak temperature of 235c for 15 seconds. verify that the pro le will not expose device to temperatures in excess of 235c. cleaning: a water-based ux wash may be used. 25 50 75 100 125 150 175 200 225 012345678 temperature ( 0 c) time (min) hmc441lm1 v02.0508 gaas phemt mmic medium power amplifier, 7 - 15.5 ghz
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